Vacuum processing apparatus

ABSTRACT

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

CLAIM OF PRIORITY

The present application claims priority from Japanese Patent ApplicationNo. 2016-023693 filed on Feb. 10, 2016, the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to a vacuum processing apparatus whichperforms etching through plasma irradiation and optical heating.

Description of Related Art

Due to demands on a semiconductor device for achieving lower powerconsumption and increased storage capacity, further miniaturization andthree-dimension of a device structure have been in progress. Inmanufacturing a device with a three-dimensional structure, the structureis sterically complicated, and thus in addition to “vertical etching”which is performed in a direction vertical to a conventional wafersurface, “isotropic etching” which can also be performed in a horizontaldirection have been frequently used. Conventionally, the horizontaletching has been performed through the isotropic etching” by way of wetprocessing using chemical solution, but due the progressedminiaturization, a problem of pattern collapse caused by surface tensionof the chemical solution has become obvious. Thus, in the isotropicetching, there have arisen needs for replacement of the conventional wetprocessing using the chemical solution with dry processing not using thechemical solution.

Known as a method of performing isotropic etching through dry processingwith high accuracy (dry removal) is an etching method of an absorbingand desorbing type (for example, Japanese Patent Application Laid-openNo. 2015-185594). With this method, radical generated by plasma is firstabsorbed to a surface of an etched layer of a processed body, and areaction layer is formed through chemical reaction (absorption process).Next, heat energy is given to desorb and remove this reaction layer(desorption process). This absorption process and this desorptionprocess are repeated alternately to perform the etching. With thismethod, in the absorption process, upon reach of the reaction layer,which has been formed on the surface, at a given thickness, the reactionlayer prevents the radical from arriving at an interface between theetched layer and the reaction layer, thus rapidly decelerating growth ofthe reaction layer. Thus, at an inner part of a complicated patternform, even with a variation in an amount of radical incidence,adequately setting sufficient absorption time permits formation of analtered layer with a uniform thickness, advantageously making itpossible to make the amount of etching uniform without depending on thepattern form. Moreover, the amount of etching per cycle can becontrolled at a level of several nanometers or below, thusadvantageously permitting adjustment of an amount of processing with adimensional accuracy of several nanometers.

-   [Patent Literature 1] Japanese Patent Application Laid-open No.    2015-185594

SUMMARY OF THE INVENTION

In the etching of the absorbing and desorbing type, the etching isperformed in a step-by-step manner by alternately performing theabsorption process and the desorption process in a cyclic manner, andthus compared to a conventional etching method of proceeding etchingthrough consecutive plasma irradiation, there arises a problem that ittakes time for processing upon etching of films of the same thickness.Thus, shortening of respective time for the absorption and desorptionprocesses has become an issue. Typically, for the shortening of the timeof the absorption process, the radical required for the reaction needsto be efficiently supplied to the wafer. For efficient irradiation ofshort-life radical to the wafer in particular, one of effective measuresis to shorten a distance between a radical generation region and thewafer. Moreover, for the purpose of shortening the time of thedesorption process, one of effective measures is to use an IR lamp(infrared lamp) for the purpose of shortening heating time.

One of effective techniques for shortening the time of the absorptionprocess is to shorten the distance between the radical generation regionand the wafer as described above, but upon incidence of a given amountof ions on the wafer at this time results in removal of the reactionlayer through ion bombardment, which therefore requires a reduction inthe amount of ion incidence on the wafer. Effective as a method ofreducing the amount of ion incidence on the wafer is a method ofinstalling an ion-screening slit plat (punched plate) between the plasmageneration region and the wafer.

In contrast, even upon adhesion of some amount of deposition radicals ona chamber wall surface on which a given amount of ion incidence ispresent, it is removed through ion bombardment, making it easy tosuppress growth of the deposited film. However, installation of theion-screening slit suppresses the amount of ion incidence on the wallsurface downstream thereof, raising a problem that the depositionradicals adheres and is formed into a film and this is detached inparticles of foreign matter, resulting in wafer contamination. Thisproblem is significant for a slit plate serving as a radical flow pathin particular.

It is an object of the present invention to provide a vacuum processingapparatus of an absorbing and desorbing type that is capable of reducingdeposition radicals on a slit plate even in a case where the slit platefor ion screening has been disposed.

To address the object described above, a vacuum processing apparatusaccording to one aspect of the invention includes: a vacuum containerincluding therein a processing chamber with a depressurized inside towhich processing gas is supplied; a sample stage which is arranged at abottom part inside of the processing chamber and on a top surface ofwhich a wafer is placed; a plasma formation chamber which is arrangedabove the processing chamber and in which plasma is formed by use of theprocessing gas; plate members of a dielectric body each being arrangedabove a top surface of the sample stage and between the processingchamber and the plasma formation chamber and each having a plurality ofintroduction holes through which the processing gas is introduced; and alamp being arranged on an outer circumference side of the plate membersin a manner such as to surround the plate members for the purpose ofheating the sample; and a window member of a ring-like shape facing theinside of the processing chamber and being formed of a membertransmitting electromagnetic waves from the lamp therethrough, whereinthe member of the window member transmitting the electromagnetic wavestherethrough forms a bottom surface of the window member and a sidesurface thereof surrounding the plate members to heat the plate memberswith the electromagnetic waves from the lamp.

The present invention can provide a vacuum processing apparatus of anabsorbing and desorbing type that is capable of reducing depositionradicals on a slit plate even in a case where the slit plate for ionscreening has been disposed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view (partially a block diagram) ofoverall configuration of a plasma processing apparatus according to afirst embodiment of the present invention;

FIG. 2 is a sectional view of essential parts illustrating heightpositional relationship between IR lamps, an IR light-transmissivewindow, and their surroundings in the plasma processing apparatus shownin FIG. 1;

FIG. 3A is a plan view of an upper slit plate in the plasma processingapparatus shown in FIG. 1;

FIG. 3B is a plan view of a lower slit plate in the plasma processingapparatus shown in FIG. 1;

FIG. 3C shows positional relationship between gas holes of the upper andlower slit plates when the slit plates are viewed from above aprocessing chamber in the plasma processing apparatus shown in FIG. 1;

FIG. 4 is a sectional view illustrating irradiation directions of IRlight and gas flows in the plasma processing apparatus shown in FIG. 1;

FIG. 5 is a sectional view illustrating details of an O-ring sealingsurface of the IR light-transmissive window shown in FIG. 2;

FIG. 6 is a diagram illustrating etching processing procedures in theplasma processing apparatus shown in FIG. 1, with a top level showinghigh-frequency power with respect to processing time, a middle levelshowing power supplied to the IR lamp with respect to the processingtime, and a bottom level showing a wafer temperature with respect to theprocessing time;

FIG. 7 is a partially sectional view illustrating progress of theetching processing performed on a processed subject in the plasmaprocessing apparatus shown in FIG. 1;

FIG. 8 is a sectional view of a plasma processing apparatus (main body)according to a second embodiment of the invention; and

FIG. 9 is a sectional view showing another example of thelight-transmissive window shown in FIG. 2.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As a result of review on solution to the problem described above by theinventors, in a plasma processing apparatus composed of a plasma sourceand a heating lamp, disposed between a wafer and the plasma source is awafer-heating lamp unit formed by use of IR lamps, and at a center ofthe lamp unit, a flow path serving as a radical passage is provided, onwhich slit plates provided with a plurality of holes for screening ionsand electrons generated by the plasma are disposed. Further, the heatinglamp is disposed in air atmosphere, an IR light-transmissive windowwhich partitions reduced pressure atmosphere in the processing chamberand the air atmosphere is disposed below the IR lamps, and this windowhas a cylindrical structure disposed at a center thereof so that thiswindow forms part of the flow path. Then the slit plates are disposed ata position lower than a top surface of the cylindrical structure. As aresult, not only the wafer but also the slit plates can be heated by theIR lamps for wafer heating.

As a result, the slit plates for the ion screening are also heated bylight for the wafer heating, thus reducing an amount of radical of adeposited film on the slit plates and suppressing formation of particlesof foreign matter attributable to the formation of the deposited film.

Hereinafter, the embodiments of the present invention will be describedin detail with reference to the drawings. Note that the same numeralsdenote the same components.

First Embodiment

First, schematic overall configuration of a plasma processing apparatusaccording to the embodiments of the invention will be described withreference to FIG. 1. Described in this embodiment is an etchingapparatus as an example of a vacuum processing apparatus, although theinvention is not limited thereto.

This plasma etching apparatus has a base chamber 11 disposed blow aprocessing chamber 101 as shown in FIG. 1, and in the base chamber 11, astage (sample stage) 104 for placing a wafer 102 thereon is disposed.Disposed above the processing chamber 101 is a plasma source, for whichan inductively coupled plasma (ICP) discharge method is adopted. Aquartz chamber 12 of a cylindrical shape forming the ICP plasma sourceis disposed above the processing chamber 101, and on an outer side ofthe quartz chamber 12, an ICP coil 34 is disposed. A high-frequencypower supply 20 for plasma generation is connected to the ICP coil via amatching box 22. For frequency of the high-frequency power, several tensof megahertz, for example, 13.56 MHz is used.

Disposed at a top part of the quartz chamber 12 is a top panel 106.Disposed at a bottom part of the top panel 106 are: gas dispersingplates 17 (including 17-1, 17-2, 17-3, and 17-4 portions) and a showerplate 105, and processing gas is introduced into the processing chamber101 via the gas dispersing plates 17 and the shower plate 105. Of theprocessing gas, flammable gas is supplied to the dispersing plate 17-2and 17-4, combustion-supporting gas and gas, neither flammable norcombustion-supporting (here, simply called inactive gas), are suppliedto the dispersing plates 17-1 and 17-3. A flow amount of the processinggas is adjusted by a mass flow controller 50 disposed for each gas kind,and a gas distributor 51 is disposed on a downstream side of the massflow controllers. This makes it possible to perform independent controlof amounts and composition of the flammable gas supplied to an areaaround a center and the flammable gas supplied to an area around outercircumference and mixed gas of the combustion-supporting gas and theinactive gas supplied to the area around the center and mixed gas of thecombustion-supporting gas and the inactive gas supplied to the areaaround the outer circumference to thereby achieve detailed control ofthe spatial distribution. In FIG. 1, NH₃, H₂, CH₂F₂, and CH₃OH aredescribed as the flammable gas and O₂ and NF₃ are described as thecombustion-supporting gas, but different gas may be used. Moreover, Ar,N₂, CHF₃, CF₄, and H₂O are described as the inactive gas in FIG. 1, butdifferent gas may be used. Moreover, the inactive gas is supplied to thedispersing plates together with the combustion-supporting gas in FIG. 1,but it may be mixed with the flammable gas to be supplied.

At a bottom part of the processing chamber 101, an exhaust unit 13including a turbo-molecular pump, a dry pump, etc. for reducing pressurein the processing chamber is connected with a pressure-adjusting valve14 in between. Numeral 10 denotes plasma, numeral 52 denotes a valve,and numeral 60 denotes an outside cover.

Disposed at the height position between the stage 104 and the ICP plasmasource is an IR lamp unit as the lamp unit for heating the wafer(sample) 102. The IR lamp unit is mainly composed of: IR lamps 62, areflective plate 63 for reflecting IR light, and an IRlight-transmissive window 74. As the IR lamp 62, a circle-type(circle-shaped) lamp is used. Light radiated from the IR lamp is mainlycomposed of light (electromagnetic waves) in a region ranging fromvisible light to infrared light. In this embodiment, the lamps (62-1,62-2, and 62-3) for three loops are disposed, but those for two or fourloops may be disposed. Moreover, one loop of the lamp may be formed ofone lamp of an annular shape, or for example, four lamps each shapedinto an arc of 90 degrees annularly may be aligned to form one annularlamp for use. Disposed above the IR lamps is the reflective plate 63 forreflecting the IR light.

Connected to the IR lamps 62 is an IR lamp power supply 64 in betweenwhich a high-frequency cut filter 25 for avoiding flow of noise ofhigh-frequency power for plasma generation into the IR lamp power supplyis disposed. Moreover, the IR lamp power supply 64 has such a functionthat permits mutually independent control of power supplied to the IRlamps 62-1, 62-2, and 62-3, so that radial distribution of amounts ofwafer heating can be adjusted (wires are partially omitted from theillustration).

Disposed at a center of the IR lamp unit is a flow path 75. Thendisposed in this flow path 75 are slit plates 78 (including portions78-1 and 78-2) having a plurality of holes open for screening the ionsand electrons generated in the plasma and transmitting only neutral gasand neutral radical therethrough to irradiate them to the wafer.Disposed from an area below the IR lamps towards a side of an inner sideof the lamps (a gas flow path 75 side) is the IR light-transmissivewindow 74 formed of quartz for passage of IR light. The IRlight-transmissive window 74 is formed of an integral member includingthe area below the IR lamp to the side of the inner side of the lamp.

Formed inside of the stage 104 are flow paths 39 of a stage-coolingrefrigerant, which is circularly supplied by a chiller 38. Moreover, tofix the wafer 102 through electrostatic absorption, embedded in thestage are electrode plates (electrodes for the electrostatic absorption)30 of a plate-like shape, to each of which a DC power supply (powersupply for the electrostatic absorption) 31 is connected. Moreover, toefficiently cool the wafer 102, He gas can be supplied between a rearsurface of the wafer 102 and the stage 104.

Next, details of configuration of the IR light-transmissive window andthe slit plates disposed in the lamp unit and their positionalrelationship will be described with reference to FIG. 2. The IRlight-transmissive window 74 has a cylindrical structure disposed at acenter thereof in a manner such as to permit not only downwardtransmission of the IR light (towards the wafer) but also transmissionof this light towards a radial center thereof, and this cylindricalstructure portion forms part of the flow path 75 at the center of thelamp unit. Provided above the cylindrical structure portion is an O-ringsealing surface 79-1 for vacuum sealing. A height of this O-ring sealingsurface 79-1 (position a of FIG. 2) is disposed at a position higherthan a height of a lower end 81-1 inside of the reflective plate(position b of FIG. 2). Numeral 143 denotes a spacer.

The slit plates 78 disposed on the flow path 75 are formed in two steps(78-1 and 78-2) in a vertical direction. FIGS. 3A to 3C schematicallyshow the slit plates. FIG. 3A shows the upper slit plate 78-1, and FIG.3B shows the lower slit plate 78-2. The slit plate has several hundredsof circular holes (gas holes) 142 (including portions 142-1 and 142-2)of several millimeters in diameter provided on a quartz (dielectricbody) plate. The neutral gas and the neutral radical are transferredfrom a plasma side to a wafer side via these holes. A thickness of theslit plate is set at several millimeters to several centimeters. FIG. 3Cshows positional relationship between the gas holes the two slit platesare viewed from above the processing chamber. The holes provided on thetwo slit plates 78-1 and 78-2 are shifted in phase from each other, andthe plasma side cannot be directly viewed from the wafer side, therebyimproving effect of screening the ions and the electrons. A gap betweenthe two slit plates 78-1 and 78-2 is determined by the spacer 143disposed between the slit plates (FIG. 2). The gap between the slitplates 78-1 and 78-2 determined by the spacer 143 is set at severalmillimeters to several centimeters. A diameter and a number of theplurality of slit plates and the gap therebetween are determined byconductance of a gas flow. The slit plates have roles of screening theions and the electrons generated in the plasma and permitting passage ofthe neutral gas and radical therethrough, and thus a too small diameterof the holes, a too small number of holes, a too close distance betweenthe two slit plates, and a too large thickness of the slit plates resultin improved effect of screening the ions and the electrons but insmaller conductance, making the passage of the neutral gas and theradical difficult. Thus, it is desirable to adjust various dimensions sothat a pressure value of a plasma-generating region in a space above theslit plates becomes as close as possible to a pressure value of a regionbelow the slit plates where the radical is irradiated to the wafer (sothat the conductance becomes larger). For example, like in a case wherethe pressure of the processed gas above the slit plate 78-1 is 50 Pawhile the pressure of the processed gas in the wafer region below theslit plat 78-2 is 45 Pa, it is desirable that the both values do notdiffer from each other by, for example, twice or more.

FIG. 4 shows an example of directions in which light of the IR lamp isirradiated (apparatus configuration is equal to that of FIG. 1). Arrows144 (from 144-1 to 144-9) in FIG. 4 denote the irradiation directions ofthe light radiated from the lamp disposed on an innermost side from aleft in the figure. A height of the slit plates 78 (the position c ofFIG. 2) is disposed at a position lower than the lower end 81-1 (theposition b of FIG. 2) inside of the reflective plate 63. As a result, asshown by, for example, the arrows 144-1 through 144-4, part of the IRlight radiated from the IR lamp can be irradiated to the slit plates 78to heat the slit plates 78. This suppresses adhesion of the depositionradicals to the slit plates. Moreover, a surface of the slit plates maybe formed to be minutely bumpy to adjust a rate of light permeability.Moreover, it is desirable to use synthetic quartz with hightransmittance of the IR light for the IR light transmissive window, butfor the quarts of the slit plates, fused quartz with a relatively highamount of infrared ray absorption may be used. That is, for the IR lighttransmissive window and the slit plates, materials having mutuallydifferent transmittance of the IR light may be used.

A material of the spacer 143 is the same as that of the slit plates.Moreover, since the upper slit plates 78-1 are exposed to the plasma,they are expected to be heated by the plasma to some extent, but thelower slit plates 78-2 are greatly screened by the ions, and thus cannotbe expected to be heated. Thus, there are high demands for heating thelower slit plates in particular by the IR light. Thus, the installationposition may be adjusted so that at least the lower slit plates canefficiently be heated by the IR light.

As can be seen from FIG. 4, adopting configuration such that the IRlight-transmissive window 74 is also disposed on the inner side and theside (X in FIG. 4) of the IR lamp has an advantage that a wafer surfaceopposite to an IR light radiation position on the IR lamp andsurroundings of the wafer center when viewed from the wafer center canbe heated, as shown by the arrows 144-3 to 144-5. In a case where the Xportion of FIG. 4 is formed of a material not transmitting the IR lighttherethrough, the wafer center cannot be heated and the wafer surfaceopposite to the IR light radiation position cannot also be heated, thusdeteriorating wafer heating power and heating uniformity.

Moreover, layout of the O-ring sealing surface 79-1 (position a of FIG.2) at a position higher than the lower end 81-1 (the position b of FIG.2) inside of the reflective plate can avoid direct hitting of the O-ring(seal member) 80 by the IR light, which can suppress deterioration ofthe O-ring 80. Further, outer circumference of the IR light-transmissivewindow 74 is stepped, and an O-ring sealing surface 79-2 at an outercircumferential part is disposed at a position higher than a lower end81-2 at outer circumference of the reflective plate 63, therebypreventing the IR light from directly hitting the O-ring 80. That is,the reflective plate 63 is also used as a cover screeningelectromagnetic waves directed towards the O ring (seal member) 80.

The direct irradiation of the IR light from the IR lamp onto the O-ring80 is avoided in this manner, but part of the light is reflected in theIR light-transmissive window 74, reaching the O-ring. Thus, to avoiddirect hitting of the O-ring 80 by the IR light to possible extent, asshown in FIG. 5, a reflective layer (electromagnetic wave transmissionsuppressing member) 82 of, for example, aluminum is deposited at theO-ring sealing surface 79-1 of the IR light-transmissive window 74, andto avoid a deterioration of the reflective layer 82 caused by theradical entering into a gap between joining surfaces, surroundings ofthe reflective layer 82 may be coated with an anti-plasma protectionlayer 83 of yttria (Y₂O₃). In this case, the O-ring 80 hits theplasma-resisting protection layer to seal a vacuum. It is needless tosay that the O-ring sealing surface 79-2 may also be similarly coatedwith a reflective layer and a plasma-resisting layer.

The various dimensions of the apparatus are as follows. In order thatthe inner processed gas supplied from dispersing plates 17-1 and 17-2 issubstantially dissociated and ionized in the plasma 10 and the neutralradical and gas pass through a substantially central area of the slitplates to be irradiated to the surroundings of the wafer center (arrowsA of FIG. 4), and in order that the outer processed gas supplied fromthe dispersing plates 17-3 and 17-4 is dissociated and ionized in theplasma 10 and the neutral radical and gas pass through a substantiallyouter side of the slit plate to be irradiated to the surroundings of thewafer outer circumference (arrow B of FIG. 4), it is desirable that adiameter of the flow path 75 and a diameter of the slit plates 78 are atleast half a diameter of the wafer to reduce mutual dispersion andmixture of the inner gas and the outer gas. In contrast, a too largediameter of the flow path 75 results in a too long distance between theIR lamp and the wafer, which leads to a decrease in the wafer heatingpower, and thus the diameter of the flow path 75 or the inner lamp 62-1is set equivalently to that of the wafer. Therefore, in a case where thediameter of the wafer is 300 mm (30 cm), the diameters of the flow path75 and the slit plate (a diameter of a punched region) at set at, forexample, 20 cm through 30 cm. Moreover, a diameter of the quartz chamber12 is 20 to 30 cm, which is equivalent to the diameter of the wafer.

A distance between the IR light-transmissive window 74 and the wafer 102is several centimeters (for example, 5 cm) or more, so that exhaust ofthe processed gas and the radical can smoothly be performed. Adifference between a height position of the IR lamp and a heightposition of the wafer is approximately 10 cm to 20 cm to thereby avoid atoo long distance between the IR lamp and the wafer. Moreover, toefficiently irradiate short-life radical to the wafer, a distancebetween the plasma or the ICP coil and the wafer is within several tensof centimeters (for example, 30 cm).

An example of processing procedures of this apparatus configured asdescribed above will be described with reference to FIGS. 6 and 7. Afterthe wafer is loaded into the processing chamber 101 through a wafertransport port (not shown) provided in the processing chamber 101(loading process, (1) of FIG. 7, wafer loading of FIG. 6), the wafer isfixed by the DC power supply 31 for electrostatic absorption and He gasfor wafer cooling is supplied to the rear surface of the wafer. Then aflow rate of the processed gas supplied into the processing chamber 101and gas composition distribution in the processing chamber 101 areadjusted by the plurality of mass flow controllers 50 and the gasdistributor 51, and plasma discharge is started by the discharge powersupply 20. Then the processed gas is ionized and dissociated in theplasma 10, and the neutral gas and radical pass through the slit plates78 and are irradiated to the wafer 102 having a layer 95 to be etched.This absorbs the radical to the wafer surface to form a reaction layer96 on a surface of the layer 95 to be etched (absorption process, (2) ofFIG. 7, and a region where high-frequency power is ON in FIG. 6). Here,the layer 95 to be etched is a layer of, for example, Si, SiO₂, SiN, W,TiN, TiO, or Al₂O₃.

Upon completion of the formation of the reaction layer 96, the dischargepower supply 20 is turned off to stop the plasma discharge. Then thesupply of the He gas to the wafer rear surface is stopped, and a valve52 is opened to make a pressure of the wafer rear surface equivalent tothe pressure inside the processing chamber. Then the DC power supply 31is turned off to release the wafer electrostatic absorption.

Next, output of the IR lamp power supply 64 is turned on to light up theIR lamp 62. The IR light radiated from the IR lamp 62 is transmittedthrough the IR light-transmissive window 74 to heat the wafer and theslit plates.

Upon reach of a wafer temperature at a given value, the output of the IRlamp power supply 64 is reduced, and the reaction layer 96 is desorbedwhile keeping the wafer temperature constant (desorption process, (3) ofFIG. 7, a region where the power of the IR lamp is ON in FIG. 6).

Subsequently, the output of the IR lamp power supply 64 is turned off tostop the heating of the wafer. Next, while Ar gas is supplied into theprocessing chamber, the He gas is supplied to the wafer rear surface tostart cooling of the wafer (cooling process, (4) of FIG. 7, a regionwhere the IR lamp is OFF in FIG. 6). At this point, a difference betweena pressure of the Ar gas and a pressure of the He gas is set atapproximately 0.5 kPa or below. For example, assumed is that thepressure of the Ar gas in the processing chamber 101 is 0.8 kPa and thepressure of the He gas on the wafer rear surface is 1 kPa (to avoidhopping of the wafer with the pressure of the He gas on the rearsurface). Then upon reach of the wafer temperature at 50 to 100 degreesCelsius or below, the DC power supply 31 is turned on to fix the waferthrough electrostatic absorption, and the Ar gas supply into theprocessing chamber is stopped or its flow rate is reduced. Then thewafer temperature is further reduced to approximately a temperature ofthe stage 104. The temperature of the stage is set at approximatelyminus 40 to 40 degrees Celsius. The wafer is not subjected to theelectrostatic absorption from the beginning in the wafer cooling for thepurpose of avoiding scratching of the wafer rear surface as a result ofabrasion between the stage and the wafer following shrinkage of thewafer in the cooling process and breakage of the wafer by stress. Uponend of the cooling, the radical irradiation is started again. Then acycle of the radical absorption and desorption ((2) to (4) of FIG. 7) isrepeated to perform etching in a step-by-step manner, and upon end ofthe etching, the wafer is carried out of the processing chamber 101. Anincrease in the number of this cycle can increase an amount of etching.This processing is controlled by a control unit (not shown)

Using the plasma processing apparatus shown in FIG. 1 provided with theIR lamp unit shown in FIG. 2, isotropic etching processing is performedin accordance with procedures shown in FIGS. 6 and 7, as a result ofwhich adhesion of a foreign matter due to the deposition radicals can bereduced to perform the etching with high accuracy.

As described above, this embodiment can provide a vacuum processingapparatus of an absorbing and desorbing type that is capable of reducingdeposition radicals on a slit even in a case where the slit for ionscreening has been disposed.

Second Embodiment

Next, another embodiment of the invention will be described withreference to FIGS. 8 and 9. Those described in the first embodiment butnot in this embodiment can also be applied to this embodiment unlessotherwise specified.

FIG. 8 is a sectional view of a plasma processing apparatus (main bodypart) according to the second embodiment of the invention. As shown inFIG. 8, instead of arranging the IR lamps 62 (here, 62-1, 62-2, and62-3) on the same plane in a direction parallel to the wafer, a methodof arranging them along a surface inclined with respect to the wafer isalso assumed to be advantageous in terms of heating uniformity. However,in this case, a height L of the lamp unit is longer than that with theconfiguration of FIG. 1, and a distance between a radical-generatingregion and the wafer becomes longer accordingly. In terms of efficientirradiation of the short-life radical to the wafer, as shown in FIG. 1,it is better to array the IR lamps 62 in the direction parallel to thewafer to reduce the height of the lamp unit. Depending on use purpose,it can be switched between arranging the IR lamps 62 on the same planein the direction parallel to the wafer and arranging them along thesurface inclined with respect to the wafer.

In the plasma processing apparatus described in the first embodiment andthe plasma processing apparatus of this embodiment shown in FIG. 8, acorner part at an inner bottom of the IR light-transmissive window 74 isformed at a right angle, but to adjust the uniformity in the waferheating by the IR lamp, as shown in FIG. 9, it is desirable to providemutually different curvatures for an outer curved part 85-1 of the IRlight-transmissive window 74 and for an inner curved part 85-2 of the IRlight-transmissive window 74 on a portion where a surface portion of theIR light-transmissive window 74 below the IR lamps and a side surfaceportion on an inner side of the IR lamps intersect with each other,thereby adjusting heating distribution to the wafer through lens effect.

As a result of performing the isotropic etching processing in accordancewith the procedures shown in FIGS. 6 and 7 by using the plasmaprocessing apparatus shown in FIG. 8, the etching can be performed withexcellent uniformity, reduced adhesion of any foreign matter due to thedeposition radicals, and high accuracy.

As described above, with this embodiment, even in a case whereion-screening slits are disposed, a vacuum processing apparatus of anabsorbing and desorbing type that is capable of reducing depositionradicals on the slits can be provided. Moreover, arranging the IR lamps62 along the surface inclined with respect to the wafer permits theetching to be performed with excellent uniformity. Moreover, providingthe mutually different curvatures of the outer curved part 85-1 and theinner curved part 85-2 at the side and bottom corner part of the gasflow path of the IR light-transmissive window 74 makes it possible toadjust the heating distribution on the wafer.

The invention is not limited to the embodiments described above, andvarious modified embodiments can be included therein. For example, theembodiments above have been described in detail for easier understandingof the invention, and the invention is not necessarily limited to theone including all the configuration described. Moreover, part of theconfiguration of one embodiment can be replaced with that of anotherembodiment, and also the configuration of another embodiment can beadded to the configuration of one embodiment. Moreover, for part of theconfiguration of each embodiment, addition, deletion, and replacement ofanother configuration can be done.

REFERENCE NUMERALS LIST

10: Plasma, 11: Base chamber, 12: Quartz chamber, 13: Exhaust unit, 14:Pressure-adjusting valve, 17, 17-1, 17-2, 17-3, 17-4: Gas dispersingplates, 20: High-frequency power source, 22: Matching box, 24: DC powersupply, 25: Filter, 30: Electrode for electrostatic absorption, 31:Power supply for electrostatic absorption, 33: Quartz chamber, 34: ICPcoil, 38: Chiller, 39: Refrigerant flow path, 50: Mass flow controller(MFC), 51: Gas distributor, 52: Valve, 60: Outside cover, 62, 62-1,62-2, 62-3: IR lamps, 63: Reflective plate, 64: IR lamp power supply,74: IR light-transmissive window, 75: Flow path, 78, 78-1, 78-2: Slitplates, 79-1, 79-2: O-ring sealing surfaces, 80: O-ring, 81-1, 81-2:Bottom surfaces of the reflective plate, 82: Aluminum film (reflectivelayer), 83: Y₂O₃ (plasma protection layer), 85-1, 85-2: Curved parts ofthe window, 95: Layer to be etched, 96: Reaction layer, 101: Processingchamber, 102: Wafer (sample), 104: Stage (sample stage), 105: Showerplate, 106: Top panel, 142, 142-1, 142-2: Gas holes, 143: Spacer.

What is claimed is:
 1. A vacuum processing apparatus comprising; avacuum container including therein a processing chamber with adepressurized inside to which processing gas is supplied; a sample stagewhich is arranged at a bottom part inside of the processing chamber andon a top surface of which a wafer is loaded; a plasma formation chamberwhich is arranged above the processing chamber and in which plasma isformed by use of the processing gas; plate members of a dielectric bodyeach being arranged above a top surface of the sample stage and betweenthe processing chamber and the plasma formation chamber and each havinga plurality of introduction holes through which the processing gas isintroduced; and a lamp being arranged on an outer circumference side ofthe plate members in a manner such as to surround the plate members forthe purpose of heating the sample; and a window member of a ring-likeshape facing the inside of the processing chamber and being formed of amember transmitting electromagnetic waves from the lamp therethrough,wherein the member of the window member transmitting the electromagneticwaves therethrough forms a bottom surface of the window member and aside surface thereof surrounding the plate members to heat the platemembers with the electromagnetic waves from the lamp.
 2. The vacuumprocessing apparatus according to claim 1, wherein the bottom surface ofthe window member and the side surface thereof surrounding the platemember are formed of an integral member transmitting the electromagneticwaves therethrough.
 3. The vacuum processing apparatus according toclaim 1, further comprising: a seal member air-tightly sealing an areabetween the inside and an outside of the processing chamber at an upperend part of a side wall forming the side surface of the window membersurrounding the plate members; and a cover being arranged between thelamp and the seal member and screening the seal member from theelectromagnetic waves.
 4. The vacuum processing apparatus according toclaim 3, further comprising a member being arranged inside of the sidewall and suppressing transmission of the electromagnetic waves to theseal member.
 5. The vacuum processing apparatus according to claim 1,wherein a control is made such that introduction of the processing gasfrom the introduction hole and heating of the sample by the lamp arerepeated alternately.
 6. The vacuum processing apparatus according toclaim 1, wherein the plate members have a first plate member and asecond plate member, and the introduction hole of the first plate memberand the introduction hole of the second plate member are arranged atdifferent planar positions.
 7. The vacuum processing apparatus accordingto claim 1, wherein an ICP coil is disposed in a manner such as tosurround the plasma formation chamber.
 8. The vacuum processingapparatus according to claim 1, wherein the window member has the bottomsurface facing the sample and the side surface facing the plate members,and a corner part formed by the bottom surface and the side surface hasa lens function for adjusting heating distribution of the sample.
 9. Thevacuum processing apparatus according to claim 8, wherein the cornerpart of the window member has different curvatures for a side facing thelamp and a side facing the sample.